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Artigo de periodico
Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation (2014)
Caño de Andrade, Maria Glória; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor ; Aoulaiche, Marc; Martino, João Antonio
Source: Microelectronics Reliability. Unidade: EP
Subjects: SILÍCIO, MICROELETRÔNICA
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ABNT
CAÑO DE ANDRADE, Maria Glória et al. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, v. 54, n. 11, p. 2349-2354, 2014Tradução . . Disponível em: https://doi.org/10.1016/j.microrel.2014.06.013. Acesso em: 09 maio 2024.
APA
Caño de Andrade, M. G., Collaert, N., Simoen, E., Claeys, C., Aoulaiche, M., & Martino, J. A. (2014). Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation. Microelectronics Reliability, 54( 11), 2349-2354. doi:10.1016/j.microrel.2014.06.013
NLM
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Vancouver
Caño de Andrade MG, Collaert N, Simoen E, Claeys C, Aoulaiche M, Martino JA. Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation [Internet]. Microelectronics Reliability. 2014 ; 54( 11): 2349-2354.[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.microrel.2014.06.013
Artigo de periodico
RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application (2013)
Caño de Andrade, Maria Glória; Martino, João Antonio ; Toledano, M; Fourati, Fatima; Degraeve, Robin; Claeys, Cor ; Simoen, Eddy ; Van den Bosch, Geert; Van Houdt, Jan
Source: Microelectronic Engineering Volume 109, September 2013, Pages 105-108. Unidade: EP
Assunto: MICROELETRÔNICA
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ABNT
CAÑO DE ANDRADE, Maria Glória et al. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application. Microelectronic Engineering Volume 109, September 2013, Pages 105-108, v. 109, p. 105-108, 2013Tradução . . Disponível em: https://doi.org/10.1016/j.mee.2013.03.019. Acesso em: 09 maio 2024.
APA
Caño de Andrade, M. G., Martino, J. A., Toledano, M., Fourati, F., Degraeve, R., Claeys, C., et al. (2013). RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application. Microelectronic Engineering Volume 109, September 2013, Pages 105-108, 109, 105-108. doi:10.1016/j.mee.2013.03.019
NLM
Caño de Andrade MG, Martino JA, Toledano M, Fourati F, Degraeve R, Claeys C, Simoen E, Van den Bosch G, Van Houdt J. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application [Internet]. Microelectronic Engineering Volume 109, September 2013, Pages 105-108. 2013 ; 109 105-108.[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.mee.2013.03.019
Vancouver
Caño de Andrade MG, Martino JA, Toledano M, Fourati F, Degraeve R, Claeys C, Simoen E, Van den Bosch G, Van Houdt J. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application [Internet]. Microelectronic Engineering Volume 109, September 2013, Pages 105-108. 2013 ; 109 105-108.[citado 2024 maio 09 ] Available from: https://doi.org/10.1016/j.mee.2013.03.019
Trabalho de evento
Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton (2012)
Caño de Andrade, Maria Glória; Martino, João Antonio ; Aoulaiche, Marc; Collaert, Nadine ; Simoen, Eddy ; Claeys, Cor
Source: Proceedings of the conference. Conference titles: International Conference on Ultimate Integration on Silicon. Unidade: EP
Assunto: CIRCUITOS INTEGRADOS
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ABNT
CAÑO DE ANDRADE, Maria Glória et al. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. 2012, Anais.. Piscataway: IEEE, 2012. . Acesso em: 09 maio 2024.
APA
Caño de Andrade, M. G., Martino, J. A., Aoulaiche, M., Collaert, N., Simoen, E., & Claeys, C. (2012). Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. In Proceedings of the conference. Piscataway: IEEE.
NLM
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2024 maio 09 ]
Vancouver
Caño de Andrade MG, Martino JA, Aoulaiche M, Collaert N, Simoen E, Claeys C. Low-Frequency noise behaviour of bulk and DTMOS triple-gate devices under 60 MeV proton irradiaton. Proceedings of the conference. 2012 ;[citado 2024 maio 09 ]
Trabalho de evento
On the variability of the low-frequency noise in UTBOX SOI nMOSFETs (2012)
Simoen, Eddy ; Caño de Andrade, Maria Glória ; Almeida, Luciano Mendes; Aoulaiche, Marc; Caillat, Christian; Jurczak, Malgorzata; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
SIMOEN, Eddy et al. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0051ecst. Acesso em: 09 maio 2024.
APA
Simoen, E., Caño de Andrade, M. G., Almeida, L. M., Aoulaiche, M., Caillat, C., Jurczak, M., & Claeys, C. (2012). On the variability of the low-frequency noise in UTBOX SOI nMOSFETs. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0051ecst
NLM
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/04901.0051ecst
Vancouver
Simoen E, Caño de Andrade MG, Almeida LM, Aoulaiche M, Caillat C, Jurczak M, Claeys C. On the variability of the low-frequency noise in UTBOX SOI nMOSFETs [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/04901.0051ecst
Trabalho de evento
Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI (2012)
Caño de Andrade, Maria Glória ; Martino, João Antonio ; Simoen, Eddy ; Claeys, Cor
Source: Microelectronics technology and devices, SBMicro. Conference titles: International Symposium on Microelectronics Technology and Devices. Unidade: EP
Assunto: MICROELETRÔNICA
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAÑO DE ANDRADE, Maria Glória et al. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI. 2012, Anais.. Pennington: Escola Politécnica, Universidade de São Paulo, 2012. Disponível em: https://doi.org/10.1149/04901.0111ecst. Acesso em: 09 maio 2024.
APA
Caño de Andrade, M. G., Martino, J. A., Simoen, E., & Claeys, C. (2012). Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI. In Microelectronics technology and devices, SBMicro. Pennington: Escola Politécnica, Universidade de São Paulo. doi:10.1149/04901.0111ecst
NLM
Caño de Andrade MG, Martino JA, Simoen E, Claeys C. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/04901.0111ecst
Vancouver
Caño de Andrade MG, Martino JA, Simoen E, Claeys C. Analog performance at room and low temperature of triple-gate devices: Bulk, DTMOS, BOI and SOI [Internet]. Microelectronics technology and devices, SBMicro. 2012 ;[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/04901.0111ecst
Artigo de periodico
Analog performance of bulk and DTMOS triple-gate devices (2010)
Caño de Andrade, Maria Glória ; Martino, João Antonio
Source: Microelectronics Technology and Devices - SBMicro 2010. Unidade: EP
Subjects: TRANSISTORES, SEMICONDUTORES
A citação é gerada automaticamente e pode não estar totalmente de acordo com as normas
ABNT
CAÑO DE ANDRADE, Maria Glória e MARTINO, João Antonio. Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, v. 31, n. 1, p. 67-74, 2010Tradução . . Disponível em: https://doi.org/10.1149/1.3474143. Acesso em: 09 maio 2024.
APA
Caño de Andrade, M. G., & Martino, J. A. (2010). Analog performance of bulk and DTMOS triple-gate devices. Microelectronics Technology and Devices - SBMicro 2010, 31( 1), 67-74. doi:10.1149/1.3474143
NLM
Caño de Andrade MG, Martino JA. Analog performance of bulk and DTMOS triple-gate devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/1.3474143
Vancouver
Caño de Andrade MG, Martino JA. Analog performance of bulk and DTMOS triple-gate devices [Internet]. Microelectronics Technology and Devices - SBMicro 2010. 2010 ;31( 1): 67-74.[citado 2024 maio 09 ] Available from: https://doi.org/10.1149/1.3474143

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